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100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE

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  • 100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE
  • 100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE
  • 100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE

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100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE Detail:

Technical data

Operating temperature range

 Max.Operating temperature.,Top,max:  +105℃Upper category temperature: +85℃Lower category temperature: -40℃

capacitance range

3～50μF

Rated voltage

200V.AC～450V.AC

Cap.tol

±5%(J) ;±10%(K)

Withstand voltage

2Un DC/10S

Dissipation factor

tgδ≤0.0015f=1KHz

Insulation resistance

   RS*C≥5000S(at20℃ 100V.DC60S)

Flame retardation

UL94V-0

Life expectancy

100000h(Un; Θhotspot≤70 °C)

Reference standard

IEC61071;

Operating temperature range

 Max.Operating temperature.,Top,max:  +105℃Upper category temperature: +85℃Lower category temperature: -40℃

capacitance range

3～50μF

Rated voltage

200V.AC～450V.AC

Cap.tol

±5%(J) ;±10%(K)

Withstand voltage

2Un DC/10S

Dissipation factor

tgδ≤0.0015f=1KHz

Insulation resistance

   RS*C≥5000S(at20℃ 100V.DC60S)

Flame retardation

UL94V-0

Life expectancy

100000h(Un; Θhotspot≤70 °C)

Feature

1. dry film construction;
2. leads with Tinned copper wire;small size.easy installation;
3. low ESL and ESR;
4. High pulse Current.

Application

1. Widely used in DC-Link circuit for filtering energy storage;
2. Can replace electrolytic capacitors, better performance and longer life.
3. Pv inverter, wind power converter; all kinds of frequency converter and inverter power supply;
Pure electric and hybrid cars; Charging pile, UPS, Etc.

Outline drawing

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（mm）
Cn(μF) L(±1) T(±1) H(±1) φd P1 P2 ESR @10KHz  (mΩ) dv/dt    (V/μS) Ipk(A) Irms @40℃ @10KHz (A)
20 42.5 30 45 1.2 37.5 2.3 30 600 12
20 42.5 30 45 1.2 37.5 20.3 1.8 30 600 22
25 57.5 30 45 1.2 52.5 3.8 17 425 12
25 57.5 30 45 1.2 52.5 20.3 3.2 17 425 22
30 57.5 30 45 1.2 52.5 3.5 17 510 12
30 57.5 30 45 1.2 52.5 20.3 2.9 17 510 22
30 57.5 30 45 1.2 52.5 10.2 2.8 17 510 25
33 57.5 35 50 1.2 52.5 3.3 17 561 12
33 57.5 35 50 1.2 52.5 20.3 2.7 17 561 22
33 57.5 35 50 1.2 52.5 10.2 2.6 17 561 28
35 57.5 35 50 1.2 52.5 3.2 17 595 12
35 57.5 35 50 1.2 52.5 20.3 2.6 17 595 22
35 57.5 35 50 1.2 52.5 10.2 2.5 17 595 30
40 57.5 35 50 1.2 52.5 3 17 680 12
40 57.5 35 50 1.2 52.5 20.3 2.4 17 680 22
40 57.5 35 50 1.2 52.5 10.2 2.3 17 680 30
45 57.5 38 54 1.0 52.5 2.8 17 765 12
45 57.5 38 54 1.0 52.5 20.3 2.3 17 765 22
45 57.5 38 54 1.0 52.5 10.2 2.2 17 765 32
50 57.5 42.5 56 1.2 52.5 2.7 17 850 12
50 57.5 42.5 56 1.2 52.5 20.3 2.2 17 850 22
50 57.5 42.5 56 1.2 52.5 10.2 2.1 17 850 32

 

Voltage Un 400V.DC,Urms250Vac;Us800V
（mm）
Cn(μF) L(±1) T(±1) H(±1) φd P1 P2 ESR(mΩ) dv/dt(V/μS) Ipk(A) Irms
10 42.5 33.5 35.5 1.2 37.5 2.6 40 400 12
10 42.5 33.5 35.5 1.2 37.5 20.3 2 40 400 23
15 42.5 30 45 1.2 37.5 2.3 40 600 28
15 42.5 30 45 1.2 37.5 20.3 1.8 40 600 28
15 42.5 30 45 1.2 37.5 10.2 1.7 40 600 28
18 42.5 33 45 1.2 37.5 2.2 40 720 15
18 42.5 33 45 1.2 37.5 20.3 1.7 40 720 15
18 42.5 33 45 1.2 37.5 10.2 1.6 40 720 15
20 57.5 30 45 1.2 52.5 3.5 20 400 25
20 57.5 30 45 1.2 52.5 20.3 2.9 20 400 25
20 57.5 30 45 1.2 52.5 10.2 2.8 20 400 25
25 57.5 35 50 1.2 52.5 3.4 20 500 28
25 57.5 35 50 1.2 52.5 20.3 2.8 20 500 28
25 57.5 35 50 1.2 52.5 10.2 2.7 20 500 28
30 57.5 38 54 1.2 52.5 3.2 20 600 25
30 57.5 38 54 1.2 52.5 20.3 2.7 20 600 25
30 57.5 38 54 1.2 52.5 10.2 2.6 20 600 25

 

Voltage Un 600V.DC,Urms330Vac;Us1200V
（mm）
Cn(μF) L(±1) T(±1) H(±1) φd P1 P2 ESR(mΩ) dv/dt(V/μS) Ipk(A) Irms
5 42.5 33.5 35.5 1.2 37.5 3.1 55 275 12
5 42.5 33.5 35.5 1.2 37.5 20.3 2.5 55 275 20
6.8 42.5 30 45 1.2 37.5 2.8 55 374 12
6.8 42.5 30 45 1.2 37.5 20.3 2.2 55 374 22
9 42.5 30 45 1.2 37.5 2.6 55 495 12
9 42.5 30 45 1.2 37.5 20.3 2.2 55 495 22
9 42.5 30 45 1.2 37.5 10.2 1.9 55 495 28
10 57.5 30 45 1.2 52.5 4.2 30 300 22
10 57.5 30 45 1.2 52.5 20.3 3.7 30 300 25
15 57.5 35 50 1.2 52.5 3.6 30 450 12
15 57.5 35 50 1.2 52.5 20.3 2.8 30 450 20
15 57.5 35 50 1.2 52.5 10.2 2.7 30 450 28

 

Voltage Un 700V.DC,Urms400Vac;Us1400V
（mm）
Cn(μF) L(±1) T(±1) H(±1) φd P1 P2 ESR(mΩ) dv/dt(V/μS) Ipk(A) Irms
4.7 42.5 30 45 1.2 37.5 3 70 329 12
4.7 42.5 30 45 1.2 37.5 20.3 2.4 70 329 22
5 42.5 30 45 1.2 37.5 2.9 70 350 12
5 42.5 30 45 1.2 37.5 20.3 2.3 70 350 22
6 42.5 33 45 1.2 37.5 2.8 70 420 12
6 42.5 33 45 1.2 37.5 20.3 2.2 70 420 22
8 57.5 35 50 1.2 52.5 4.2 40 320 12
8 57.5 35 50 1.2 52.5 20.3 3.6 40 320 22
8 57.5 35 50 1.2 52.5 10.2 3.5 40 320 28
10 57.5 35 50 1.2 52.5 3.9 40 400 12
10 57.5 35 50 1.2 52.5 20.3 3.3 40 400 22
10 57.5 35 50 1.2 52.5 10.2 3.2 40 400 30
15 57.5 38 54 1.2 52.5 3.6 40 600 12
15 57.5 38 54 1.2 52.5 20.3 3.1 40 600 22
15 57.5 38 54 1.2 52.5 10.2 3 40 600 30

 

Voltage Un 850V.DC,Urms450Vac;Us1700V
（mm）
Cn(μF) L(±1) T(±1) H(±1) φd P1 P2 ESR(mΩ) dv/dt(V/μS) Ipk(A) Irms
3 42.5 30 45 1.2 37.5 2.4 110 330 12
3 42.5 30 45 1.2 37.5 20.3 1.8 110 330 22
3 42.5 30 45 1.2 37.5 10.2 1.7 110 330 25
3.3 42.5 30 45 1.2 37.5 2.3 110 363 12
3.3 42.5 30 45 1.2 37.5 20.3 1.7 110 363 22
3.3 42.5 30 45 1.2 37.5 10.2 1.6 110 363 28
4 57.5 30 45 1.2 52.5 3.1 55 220 12
4 57.5 30 45 1.2 52.5 20.3 2.5 55 220 22
4 57.5 30 45 1.2 52.5 10.2 2.4 55 220 28
4.7 57.5 30 45 1.2 52.5 3 55 258.5 12
4.7 57.5 30 45 1.2 52.5 20.3 2.4 55 258.5 22
4.7 57.5 30 45 1.2 52.5 10.2 2.3 55 258.5 30
5.6 57.5 35 50 1.2 52.5 2.9 55 308 12
5.6 57.5 35 50 1.2 52.5 20.3 2.2 55 308 22
5.6 57.5 35 50 1.2 52.5 10.2 2.2 55 308 31
6 57.5 35 50 1.2 37.5 2.8 55 330 12
6 57.5 35 50 1.2 37.5 20.5 2.1 55 330 22
6 57.5 35 50 1.2 37.5 10.2 2 55 330 32
6.8 57.5 42.5 56 1.2 37.5 2.5 55 374 12
6.8 57.5 42.5 56 1.2 37.5 20.3 1.9 55 374 22
6.8 57.5 42.5 56 1.2 37.5 10.2 1.8 55 374 32
Product detail pictures:

100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE detail pictures

100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE detail pictures

100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE detail pictures

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We always believe that one's character decides products' quality, the details decides products' high-quality ,together with the REALISTIC,EFFICIENT AND INNOVATIVE crew spirit for 100% Original Factory High Dv/Dt Withstand Gto Snubber - Advanced embedded PCB capacitor designed for high power system – CRE , The product will supply to all over the world, such as: Sri Lanka, Bandung, Romania, With the development of the society and economy, our company will continue the "loyalty, dedication, efficiency, innovation" spirit of enterprise, and we will always adhere to the management idea of "would rather lose gold, do not lose customers heart". We will serve the domestic and foreign businessmen with sincere dedication, and let us create bright future together with you!
    • It's really lucky to find such a professional and responsible manufacturer, the product quality is good and delivery is timely, very nice.
    5 Stars By Pamela from Seychelles - 2017.08.18 11:04
    We have been cooperated with this company for many years, the company always ensure timely delivery ,good quality and correct number, we are good partners.
    5 Stars By Raymond from Ecuador - 2017.10.25 15:53

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