2018 High quality High Power Film Capacitor - Metalized film IGBT Snubber capacitor – CRE

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With dependable high-quality method, fantastic standing and ideal purchaser assistance, the series of products produced by our firm are exported to many countries and regions for Snubber Capacitor For Infineon Igbt , Metalized Film Power Capacitor , Cooling Power Capacitors , We will keep working hard and as we try our best to supply the best quality products, most competitive price and excellent service to every customer. Your satisfaction, our glory!!!

2018 High quality High Power Film Capacitor - Metalized film IGBT Snubber capacitor – CRE Detail:

Technical data

Operating temperature range	Max.Operating temperature.,Top,max: +105℃Upper category temperature: +85℃Lower category temperature: -40℃
capacitance range	0.1μF～5.6μF
Rated voltage	700V.DC～3000V.DC
Cap.tol	±5%(J) ;±10%(K)
Withstand voltage	1.5Un DC/10S
Dissipation factor	tgδ≤0.0005 C≤1μF f=10KHztgδ≤0.001 C≥1μF f=10KHz
Insulation resistance	C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S(at20℃ 100V.DC 60S)
Withstand strike current	具体见规格表
Flame retardation	UL94V-0
Life expectancy	100000h(Un; Θhotspot≤85°C)
Reference standard	IEC61071;GB/T17702;

Voltage			Un 700V.DC,Urms400Vac;Us1050V
	Diemension（mm）
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33


Voltage			Un 1000V.DC,Urms500Vac;Us1500V
	Diemension（mm）
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32

Voltage			Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32

Voltage			Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32

Voltage			Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32

Voltage			Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Feature

1. Plastic, Sealed with resin;

2. Tin-plated copper inserts leads , easy installation for IGBT;

3. Resistance to high voltage, low tgδ,low temperature rise;

4. low ESL and ESR;

5. High pulse Current.

By utilizing low inductance internal constructions, optional molded resin cases, and customized terminations, SMJ-P Series are designed for fast switching IGBTS and can serve as snubbers and high current high frequency input filters.

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The organization upholds the philosophy of "Be No.1 in good quality, be rooted on credit history and trustworthiness for growth", will keep on to provide previous and new customers from home and overseas whole-heatedly for 2018 High quality High Power Film Capacitor - Metalized film IGBT Snubber capacitor – CRE , The product will supply to all over the world, such as: Irish, Hungary, Melbourne, We aspire to meet the demands of our customers globally. Our range of products and services is continuously expanding to meet customers' requirements. We welcome new and old customers from all walks of life to contact us for future business relationships and achieving mutual success!

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This is a honest and trustworthy company, technology and equipment are very advanced and the prodduct is very adequate, there is no worry in the suppliment.

By Christina from Melbourne - 2017.05.02 18:28

The sales manager has a good English level and skilled professional knowledge, we have a good communication. He is a warm and cheerful man, we have a pleasant cooperation and we became very good friends in private.

By Judy from Orlando - 2017.05.21 12:31