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Factory supplied Igbt Absorbing Circuit Capacitor - Metalized film IGBT Snubber capacitor – CRE

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Factory supplied Igbt Absorbing Circuit Capacitor - Metalized film IGBT Snubber capacitor – CRE Detail:

Technical data

 

Operating temperature range Max.Operating temperature.,Top,max:  +105℃Upper category temperature: +85℃Lower category temperature: -40℃
capacitance range 0.1μF~5.6μF
Rated voltage 700V.DC~3000V.DC
Cap.tol ±5%(J) ;±10%(K)
Withstand voltage 1.5Un DC/10S
Dissipation factor tgδ≤0.0005  C≤1μF f=10KHztgδ≤0.001  C≥1μF f=10KHz
Insulation resistance

C≤0.33μF RS≥15000 MΩ  (at20℃ 100V.DC 60S)

C>0.33μF  RS*C≥5000S(at20℃ 100V.DC 60S)

Withstand strike current

具体见规格表

Flame retardation

UL94V-0

Life expectancy

100000h(Un; Θhotspot≤85°C)

Reference standard

IEC61071;GB/T17702;

 

Voltage Un 700V.DC,Urms400Vac;Us1050V
Diemension(mm)
Cn(μF) L(±1) T(±1) H(±1) ESR @100KHz  (mΩ) ESL(nH) dv/dt    (V/μS) Ipk(A) Irms @40℃ @100KHz (A)
0.47 42.5 24.5 27.5 12 25 500 235 8
0.68 42.5 24.5 27.5 10 25 480 326.4 10
1 42.5 24.5 27.5 8 24 450 450 12
1.5 42.5 33.5 35.5 7 25 430 645 5
2 42.5 33 35.5 6 24 420 840 15
2.5 42.5 33 45 6 23 400 1000 18
3 42.5 33 45 5.5 22 380 1140 20
3 57.5 30 45 5 26 350 1050 22
3.5 42.5 33 45 5 23 350 1225 25
3.5 57.5 30 45 6 25 300 1050 22
4.7 57.5 35 50 5 28 280 1316 25
5.6 57.5 38 54 4 30 250 1400 25
6 57.5 38 54 3.5 33 230 1380 28
6.8 57.5 42.5 56 3.2 32 220 1496 32
8 57.5 42.5 56 2.8 30 200 1600 33

 

Voltage Un 1000V.DC,Urms500Vac;Us1500V
Diemension(mm)
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.47 42.5 24.5 27.5 11 25 1000 470 10
0.68 42.5 24.5 27.5 8 25 800 544 12
1 42.5 33.5 35.5 6 24 800 800 15
1.5 42.5 33 45 6 24 700 1050 15
2 42.5 33 45 5 22 700 1400 20
2.5 57.5 30 45 5 30 600 1500 22
3 57.5 35 50 4 30 600 1800 25
3.3 57.5 35 50 3.5 28 550 1815 25
3.5 57.5 38 54 3.5 28 500 1750 25
4 57.5 38 54 3.2 26 500 2000 28
4.7 57.5 42.5 56 3 25 420 1974 30
5.6 57.5 42.5 56 2.8 24 400 2240 32

 

Voltage Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.47 42.5 24.5 27.5 11 24 1200 564 10
0.68 42.5 33.5 35.5 7 23 1100 748 12
1 42.5 33.5 35.5 6 22 800 800 14
1.5 42.5 33 45 5 20 800 1200 15
2 57.5 30 45 4 30 750 1500 20
2.5 57.5 35 50 4 28 700 1750 25
3 57.5 35 50 4 27 600 1800 25
3.3 57.5 38 54 4 27 550 1815 28
3.5 57.5 38 54 3.5 25 500 1750 28
4 57.5 42.5 56 3.5 25 450 1800 30
4.7 57.5 42.5 56 3.2 23 420 1974 32

 

Voltage Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.33 42.5 24.5 27.5 12 25 1300 429 9
0.47 42.5 24.5 27.5 10 24 1300 611 10
0.68 42.5 33.5 35.5 8 23 1300 884 12
1 42.5 33 45 7 22 1200 1200 15
1.5 42.5 33 45 6 22 1200 1800 18
1.5 57.5 30 45 5 31 1200 1800 20
2 57.5 30 45 5 30 1100 2200 22
2.5 57.5 35 50 4 28 1100 2750 25
3 57.5 38 54 4 27 700 2100 25
3.3 57.5 38 54 3.8 26 600 1980 28
3.5 57.5 42.5 56 3.5 25 500 1750 30
4 57.5 42.5 56 3.2 25 450 1800 32

 

Voltage Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.22 42.5 24.5 27.5 15 25 1500 330 10
0.33 42.5 33.5 35.5 12 24 1500 495 12
0.47 42.5 33.5 35.5 11 23 1400 658 15
0.68 42.5 33 45 8 22 1200 816 18
0.68 57.5 30 45 7 30 1100 748 20
0.82 42.5 33 45 7 28 1200 984 22
1 57.5 30 45 6 28 1100 1100 25
1.5 57.5 35 50 5 25 1000 1500 28
2 57.5 38 54 5 24 800 1600 28
2.2 57.5 42.5 56 4 23 700 1540 32

 

Voltage Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.15 42.5 33 45 18 28 2500 375 25
0.22 42.5 33 45 15 27 2200 484 28
0.22 57.5 35 50 15 25 2000 330 20
0.33 57.5 35 50 12 24 1800 495 20
0.47 57.5 38 54 11 23 1600 752 22
0.68 57.5 42.5 56 8 22 1500 1020 28

Feature

1. Plastic, Sealed with resin;

2. Tin-plated copper inserts leads , easy installation for IGBT;

3. Resistance to high voltage, low tgδ,low temperature rise;

4. low ESL and ESR;

5. High pulse Current.

By utilizing low inductance internal constructions, optional molded resin cases, and customized terminations, SMJ-P Series are designed for fast switching IGBTS and can serve as snubbers and high current high frequency input filters.


Product detail pictures:

Factory supplied Igbt Absorbing Circuit Capacitor - Metalized film IGBT Snubber capacitor  – CRE detail pictures

Factory supplied Igbt Absorbing Circuit Capacitor - Metalized film IGBT Snubber capacitor  – CRE detail pictures

Factory supplied Igbt Absorbing Circuit Capacitor - Metalized film IGBT Snubber capacitor  – CRE detail pictures

Factory supplied Igbt Absorbing Circuit Capacitor - Metalized film IGBT Snubber capacitor  – CRE detail pictures


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With a sound enterprise credit history, exceptional after-sales services and modern production facilities, we've earned an outstanding track record amongst our consumers across the whole world for Factory supplied Igbt Absorbing Circuit Capacitor - Metalized film IGBT Snubber capacitor – CRE , The product will supply to all over the world, such as: Montreal, Austria, Indonesia, Honest to every customers are our requested! First-class serve, best quality, best price and fastest delivery date is our advantage! Give every customers good serve is our tenet! This makes our company get the favour of customers and support! Welcome all over the world customers send us enquiry and looking forward your good co-operation !Make sure you your inquiry for more details or request for dealership in selected regions.
  • We are really happy to find such a manufacturer that ensuring product quality at the same time the price is very cheap.
    5 Stars By Christina from Honduras - 2017.08.18 11:04
    The factory can meet continuously developing economic and market needs, so that their products are widely recognized and trusted, and that's why we chose this company.
    5 Stars By Steven from Austria - 2017.05.02 18:28

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