Manufacturing Companies for Film Power Capacitor For Power Generation - High-class IGBT Snubber capacitor design for high power applications – CRE
Manufacturing Companies for Film Power Capacitor For Power Generation - High-class IGBT Snubber capacitor design for high power applications – CRE Detail:
Technical data
| Operating temperature range | Max.Operating temperature.,Top,max: +105℃Upper category temperature: +85℃Lower category temperature: -40℃ |
| capacitance range | 0.1μF~5.6μF |
| Rated voltage | 700V.DC~3000V.DC |
| Cap.tol | ±5%(J);±10%(K) |
| Withstand voltage | 1.5Un DC/10S |
| Dissipation factor | tgδ≤0.0005 C≤1μF f=10KHztgδ≤0.001 C≥1μF f=10KHz |
| Insulation resistance |
C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C>0.33μF RS*C≥5000S(at20℃ 100V.DC 60S) |
| Withstand strike current |
see datasheet |
| Flame retardation |
UL94V-0 |
| Life expectancy |
100000h(Un; Θhotspot≤85°C) |
| Reference standard |
IEC61071;GB/T17702; |
Specification table
| Voltage | Un 700V.DC,Urms400Vac;Us1050V | |||||||
| Diemension(mm) | ||||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR @100KHz (mΩ) | ESL(nH) | dv/dt (V/μS) | Ipk(A) | Irms @40℃ @100KHz (A) |
| 0.47 | 42.5 | 24.5 | 27.5 | 12 | 25 | 500 | 235 | 8 |
| 0.68 | 42.5 | 24.5 | 27.5 | 10 | 25 | 480 | 326.4 | 10 |
| 1 | 42.5 | 24.5 | 27.5 | 8 | 24 | 450 | 450 | 12 |
| 1.5 | 42.5 | 33.5 | 35.5 | 7 | 25 | 430 | 645 | 5 |
| 2 | 42.5 | 33 | 35.5 | 6 | 24 | 420 | 840 | 15 |
| 2.5 | 42.5 | 33 | 45 | 6 | 23 | 400 | 1000 | 18 |
| 3 | 42.5 | 33 | 45 | 5.5 | 22 | 380 | 1140 | 20 |
| 3 | 57.5 | 30 | 45 | 5 | 26 | 350 | 1050 | 22 |
| 3.5 | 42.5 | 33 | 45 | 5 | 23 | 350 | 1225 | 25 |
| 3.5 | 57.5 | 30 | 45 | 6 | 25 | 300 | 1050 | 22 |
| 4.7 | 57.5 | 35 | 50 | 5 | 28 | 280 | 1316 | 25 |
| 5.6 | 57.5 | 38 | 54 | 4 | 30 | 250 | 1400 | 25 |
| 6 | 57.5 | 38 | 54 | 3.5 | 33 | 230 | 1380 | 28 |
| 6.8 | 57.5 | 42.5 | 56 | 3.2 | 32 | 220 | 1496 | 32 |
| 8 | 57.5 | 42.5 | 56 | 2.8 | 30 | 200 | 1600 | 33 |
| Voltage | Un 1000V.DC,Urms500Vac;Us1500V | |||||||
| Diemension(mm) | ||||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.47 | 42.5 | 24.5 | 27.5 | 11 | 25 | 1000 | 470 | 10 |
| 0.68 | 42.5 | 24.5 | 27.5 | 8 | 25 | 800 | 544 | 12 |
| 1 | 42.5 | 33.5 | 35.5 | 6 | 24 | 800 | 800 | 15 |
| 1.5 | 42.5 | 33 | 45 | 6 | 24 | 700 | 1050 | 15 |
| 2 | 42.5 | 33 | 45 | 5 | 22 | 700 | 1400 | 20 |
| 2.5 | 57.5 | 30 | 45 | 5 | 30 | 600 | 1500 | 22 |
| 3 | 57.5 | 35 | 50 | 4 | 30 | 600 | 1800 | 25 |
| 3.3 | 57.5 | 35 | 50 | 3.5 | 28 | 550 | 1815 | 25 |
| 3.5 | 57.5 | 38 | 54 | 3.5 | 28 | 500 | 1750 | 25 |
| 4 | 57.5 | 38 | 54 | 3.2 | 26 | 500 | 2000 | 28 |
| 4.7 | 57.5 | 42.5 | 56 | 3 | 25 | 420 | 1974 | 30 |
| 5.6 | 57.5 | 42.5 | 56 | 2.8 | 24 | 400 | 2240 | 32 |
| Voltage | Un 1200V.DC,Urms550Vac;Us1800V | |||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.47 | 42.5 | 24.5 | 27.5 | 11 | 24 | 1200 | 564 | 10 |
| 0.68 | 42.5 | 33.5 | 35.5 | 7 | 23 | 1100 | 748 | 12 |
| 1 | 42.5 | 33.5 | 35.5 | 6 | 22 | 800 | 800 | 14 |
| 1.5 | 42.5 | 33 | 45 | 5 | 20 | 800 | 1200 | 15 |
| 2 | 57.5 | 30 | 45 | 4 | 30 | 750 | 1500 | 20 |
| 2.5 | 57.5 | 35 | 50 | 4 | 28 | 700 | 1750 | 25 |
| 3 | 57.5 | 35 | 50 | 4 | 27 | 600 | 1800 | 25 |
| 3.3 | 57.5 | 38 | 54 | 4 | 27 | 550 | 1815 | 28 |
| 3.5 | 57.5 | 38 | 54 | 3.5 | 25 | 500 | 1750 | 28 |
| 4 | 57.5 | 42.5 | 56 | 3.5 | 25 | 450 | 1800 | 30 |
| 4.7 | 57.5 | 42.5 | 56 | 3.2 | 23 | 420 | 1974 | 32 |
| Voltage | Un 1700V.DC,Urms575Vac;Us2250V | |||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.33 | 42.5 | 24.5 | 27.5 | 12 | 25 | 1300 | 429 | 9 |
| 0.47 | 42.5 | 24.5 | 27.5 | 10 | 24 | 1300 | 611 | 10 |
| 0.68 | 42.5 | 33.5 | 35.5 | 8 | 23 | 1300 | 884 | 12 |
| 1 | 42.5 | 33 | 45 | 7 | 22 | 1200 | 1200 | 15 |
| 1.5 | 42.5 | 33 | 45 | 6 | 22 | 1200 | 1800 | 18 |
| 1.5 | 57.5 | 30 | 45 | 5 | 31 | 1200 | 1800 | 20 |
| 2 | 57.5 | 30 | 45 | 5 | 30 | 1100 | 2200 | 22 |
| 2.5 | 57.5 | 35 | 50 | 4 | 28 | 1100 | 2750 | 25 |
| 3 | 57.5 | 38 | 54 | 4 | 27 | 700 | 2100 | 25 |
| 3.3 | 57.5 | 38 | 54 | 3.8 | 26 | 600 | 1980 | 28 |
| 3.5 | 57.5 | 42.5 | 56 | 3.5 | 25 | 500 | 1750 | 30 |
| 4 | 57.5 | 42.5 | 56 | 3.2 | 25 | 450 | 1800 | 32 |
| Voltage | Un 2000V.DC,Urms700Vac;Us3000V | |||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.22 | 42.5 | 24.5 | 27.5 | 15 | 25 | 1500 | 330 | 10 |
| 0.33 | 42.5 | 33.5 | 35.5 | 12 | 24 | 1500 | 495 | 12 |
| 0.47 | 42.5 | 33.5 | 35.5 | 11 | 23 | 1400 | 658 | 15 |
| 0.68 | 42.5 | 33 | 45 | 8 | 22 | 1200 | 816 | 18 |
| 0.68 | 57.5 | 30 | 45 | 7 | 30 | 1100 | 748 | 20 |
| 0.82 | 42.5 | 33 | 45 | 7 | 28 | 1200 | 984 | 22 |
| 1 | 57.5 | 30 | 45 | 6 | 28 | 1100 | 1100 | 25 |
| 1.5 | 57.5 | 35 | 50 | 5 | 25 | 1000 | 1500 | 28 |
| 2 | 57.5 | 38 | 54 | 5 | 24 | 800 | 1600 | 28 |
| 2.2 | 57.5 | 42.5 | 56 | 4 | 23 | 700 | 1540 | 32 |
| Voltage | Un 3000V.DC,Urms750Vac;Us4500V | |||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.15 | 42.5 | 33 | 45 | 18 | 28 | 2500 | 375 | 25 |
| 0.22 | 42.5 | 33 | 45 | 15 | 27 | 2200 | 484 | 28 |
| 0.22 | 57.5 | 35 | 50 | 15 | 25 | 2000 | 330 | 20 |
| 0.33 | 57.5 | 35 | 50 | 12 | 24 | 1800 | 495 | 20 |
| 0.47 | 57.5 | 38 | 54 | 11 | 23 | 1600 | 752 | 22 |
| 0.68 | 57.5 | 42.5 | 56 | 8 | 22 | 1500 | 1020 | 28 |
Product detail pictures:
Related Product Guide:
Our goods are broadly recognized and reliable by users and can meet consistently switching financial and social demands of Manufacturing Companies for Film Power Capacitor For Power Generation - High-class IGBT Snubber capacitor design for high power applications – CRE , The product will supply to all over the world, such as: panama, Ottawa, Swansea, If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.
The factory technical staff not only have high level of technology, their English level is also very good, this is a great help to technology communication.
Send your message to us:
Write your message here and send it to us






