OEM manufacturer High Voltage Power Electronic Capacitor - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE
OEM manufacturer High Voltage Power Electronic Capacitor - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE Detail:
SMJ-P series
Rated Voltage Range: 1000 VDC to 2000 VDC
Capacitance Range: 0.1 uf to 3.0 uf
Mounting Pitch : 22.5 mm to 48 mm
Construction : Metallized Polypropylene Dielectric Internal Series Connection
Application : IGBT Protection, Resonance Tank Circuits
The self-healing, dry-type, snubber capacitor elements are produced using specially profiled, wave cut metallized PP film which ensures low self-inductance, high rupture resistance and high reliability. Over-pressure disconnection is not considered necessary. The capacitor top is sealed with self-extinguishing eco-friendly epoxy. Special design ensures very low self inductance.

Specification table
| Voltage | Un 700V.DC,Urms400Vac;Us1050V | |||||||
| Diemension(mm) | ||||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR @100KHz (mΩ) | ESL(nH) | dv/dt (V/μS) | Ipk(A) | Irms @40℃ @100KHz (A) |
| 0.47 | 42.5 | 24.5 | 27.5 | 12 | 25 | 500 | 235 | 8 |
| 0.68 | 42.5 | 24.5 | 27.5 | 10 | 25 | 480 | 326.4 | 10 |
| 1 | 42.5 | 24.5 | 27.5 | 8 | 24 | 450 | 450 | 12 |
| 1.5 | 42.5 | 33.5 | 35.5 | 7 | 25 | 430 | 645 | 5 |
| 2 | 42.5 | 33 | 35.5 | 6 | 24 | 420 | 840 | 15 |
| 2.5 | 42.5 | 33 | 45 | 6 | 23 | 400 | 1000 | 18 |
| 3 | 42.5 | 33 | 45 | 5.5 | 22 | 380 | 1140 | 20 |
| 3 | 57.5 | 30 | 45 | 5 | 26 | 350 | 1050 | 22 |
| 3.5 | 42.5 | 33 | 45 | 5 | 23 | 350 | 1225 | 25 |
| 3.5 | 57.5 | 30 | 45 | 6 | 25 | 300 | 1050 | 22 |
| 4.7 | 57.5 | 35 | 50 | 5 | 28 | 280 | 1316 | 25 |
| 5.6 | 57.5 | 38 | 54 | 4 | 30 | 250 | 1400 | 25 |
| 6 | 57.5 | 38 | 54 | 3.5 | 33 | 230 | 1380 | 28 |
| 6.8 | 57.5 | 42.5 | 56 | 3.2 | 32 | 220 | 1496 | 32 |
| 8 | 57.5 | 42.5 | 56 | 2.8 | 30 | 200 | 1600 | 33 |
| Voltage | Un 1000V.DC,Urms500Vac;Us1500V | |||||||
| Diemension(mm) | ||||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.47 | 42.5 | 24.5 | 27.5 | 11 | 25 | 1000 | 470 | 10 |
| 0.68 | 42.5 | 24.5 | 27.5 | 8 | 25 | 800 | 544 | 12 |
| 1 | 42.5 | 33.5 | 35.5 | 6 | 24 | 800 | 800 | 15 |
| 1.5 | 42.5 | 33 | 45 | 6 | 24 | 700 | 1050 | 15 |
| 2 | 42.5 | 33 | 45 | 5 | 22 | 700 | 1400 | 20 |
| 2.5 | 57.5 | 30 | 45 | 5 | 30 | 600 | 1500 | 22 |
| 3 | 57.5 | 35 | 50 | 4 | 30 | 600 | 1800 | 25 |
| 3.3 | 57.5 | 35 | 50 | 3.5 | 28 | 550 | 1815 | 25 |
| 3.5 | 57.5 | 38 | 54 | 3.5 | 28 | 500 | 1750 | 25 |
| 4 | 57.5 | 38 | 54 | 3.2 | 26 | 500 | 2000 | 28 |
| 4.7 | 57.5 | 42.5 | 56 | 3 | 25 | 420 | 1974 | 30 |
| 5.6 | 57.5 | 42.5 | 56 | 2.8 | 24 | 400 | 2240 | 32 |
| Voltage | Un 1200V.DC,Urms550Vac;Us1800V | |||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.47 | 42.5 | 24.5 | 27.5 | 11 | 24 | 1200 | 564 | 10 |
| 0.68 | 42.5 | 33.5 | 35.5 | 7 | 23 | 1100 | 748 | 12 |
| 1 | 42.5 | 33.5 | 35.5 | 6 | 22 | 800 | 800 | 14 |
| 1.5 | 42.5 | 33 | 45 | 5 | 20 | 800 | 1200 | 15 |
| 2 | 57.5 | 30 | 45 | 4 | 30 | 750 | 1500 | 20 |
| 2.5 | 57.5 | 35 | 50 | 4 | 28 | 700 | 1750 | 25 |
| 3 | 57.5 | 35 | 50 | 4 | 27 | 600 | 1800 | 25 |
| 3.3 | 57.5 | 38 | 54 | 4 | 27 | 550 | 1815 | 28 |
| 3.5 | 57.5 | 38 | 54 | 3.5 | 25 | 500 | 1750 | 28 |
| 4 | 57.5 | 42.5 | 56 | 3.5 | 25 | 450 | 1800 | 30 |
| 4.7 | 57.5 | 42.5 | 56 | 3.2 | 23 | 420 | 1974 | 32 |
| Voltage | Un 1700V.DC,Urms575Vac;Us2250V | |||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.33 | 42.5 | 24.5 | 27.5 | 12 | 25 | 1300 | 429 | 9 |
| 0.47 | 42.5 | 24.5 | 27.5 | 10 | 24 | 1300 | 611 | 10 |
| 0.68 | 42.5 | 33.5 | 35.5 | 8 | 23 | 1300 | 884 | 12 |
| 1 | 42.5 | 33 | 45 | 7 | 22 | 1200 | 1200 | 15 |
| 1.5 | 42.5 | 33 | 45 | 6 | 22 | 1200 | 1800 | 18 |
| 1.5 | 57.5 | 30 | 45 | 5 | 31 | 1200 | 1800 | 20 |
| 2 | 57.5 | 30 | 45 | 5 | 30 | 1100 | 2200 | 22 |
| 2.5 | 57.5 | 35 | 50 | 4 | 28 | 1100 | 2750 | 25 |
| 3 | 57.5 | 38 | 54 | 4 | 27 | 700 | 2100 | 25 |
| 3.3 | 57.5 | 38 | 54 | 3.8 | 26 | 600 | 1980 | 28 |
| 3.5 | 57.5 | 42.5 | 56 | 3.5 | 25 | 500 | 1750 | 30 |
| 4 | 57.5 | 42.5 | 56 | 3.2 | 25 | 450 | 1800 | 32 |
| Voltage | Un 2000V.DC,Urms700Vac;Us3000V | |||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.22 | 42.5 | 24.5 | 27.5 | 15 | 25 | 1500 | 330 | 10 |
| 0.33 | 42.5 | 33.5 | 35.5 | 12 | 24 | 1500 | 495 | 12 |
| 0.47 | 42.5 | 33.5 | 35.5 | 11 | 23 | 1400 | 658 | 15 |
| 0.68 | 42.5 | 33 | 45 | 8 | 22 | 1200 | 816 | 18 |
| 0.68 | 57.5 | 30 | 45 | 7 | 30 | 1100 | 748 | 20 |
| 0.82 | 42.5 | 33 | 45 | 7 | 28 | 1200 | 984 | 22 |
| 1 | 57.5 | 30 | 45 | 6 | 28 | 1100 | 1100 | 25 |
| 1.5 | 57.5 | 35 | 50 | 5 | 25 | 1000 | 1500 | 28 |
| 2 | 57.5 | 38 | 54 | 5 | 24 | 800 | 1600 | 28 |
| 2.2 | 57.5 | 42.5 | 56 | 4 | 23 | 700 | 1540 | 32 |
| Voltage | Un 3000V.DC,Urms750Vac;Us4500V | |||||||
| Cn(μF) | L(±1) | T(±1) | H(±1) | ESR(mΩ) | ESL(nH) | dv/dt(V/μS) | Ipk(A) | Irms |
| 0.15 | 42.5 | 33 | 45 | 18 | 28 | 2500 | 375 | 25 |
| 0.22 | 42.5 | 33 | 45 | 15 | 27 | 2200 | 484 | 28 |
| 0.22 | 57.5 | 35 | 50 | 15 | 25 | 2000 | 330 | 20 |
| 0.33 | 57.5 | 35 | 50 | 12 | 24 | 1800 | 495 | 20 |
| 0.47 | 57.5 | 38 | 54 | 11 | 23 | 1600 | 752 | 22 |
| 0.68 | 57.5 | 42.5 | 56 | 8 | 22 | 1500 | 1020 | 28 |
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We'll make every effort and hard work to be superb and excellent, and speed up our steps for standing inside the rank of intercontinental top-grade and high-tech enterprises for OEM manufacturer High Voltage Power Electronic Capacitor - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE , The product will supply to all over the world, such as: Bandung, San Francisco, Canberra, We also provide OEM service that caters to your specific needs and requirements. With a strong team of experienced engineers in hose design and development, we value every opportunity to provide best products for our customers.
Hope that the company could stick to the enterprise spirit of "Quality, Efficiency, Innovation and Integrity", it will be better and better in the future.
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