2018 High quality High Power Film Capacitor - GTO snubber capacitor in power electronic equipment – CRE
2018 High quality High Power Film Capacitor - GTO snubber capacitor in power electronic equipment – CRE Detail:
Technical data
| Operating temperature range | Max.Operating temperature.,Top,max: + 85℃Upper category temperature: +85℃Lower category temperature: -40℃ |
| capacitance range |
0.22~3μF |
| Rated voltage |
3000V.DC~10000V.DC |
| Cap.tol |
±5%(J) ;±10%(K) |
| Withstand voltage |
1.35Un DC/10S |
| Dissipation factor |
tgδ≤0.001 f=1KHz |
| Insulation resistance |
C≤0.33μF RS≥15000 MΩ (at 20℃ 100V.DC 60S) C>0.33μF RS*C≥5000S (at 20℃ 100V.DC 60S) |
| Withstand strike current |
see datasheet |
| Life expectancy |
100000h(Un; Θhotspot≤70°C) |
| Reference standard |
IEC 61071 ; |
Feature
1. Mylar tape, Sealed with resin;
2. Copper nut leads;
3. Resistance to high voltage, low tgδ, low temperature rise;
4. low ESL and ESR;
5. High pulse Current.
Application
1. GTO Snubber.
2. Widely used in power electronic equipment when the peak voltage, peak current absorption protection.
Typical circuit

Outline drawing

Specification
| Un=3000V.DC | |||||||
|
Capacitance (μF) |
φD (mm) |
L(mm) |
L1(mm) |
ESL(nH) |
dv/dt(V/μS) |
Ipk(A) |
Irms(A) |
|
0.22 |
35 |
44 |
52 |
25 |
1100 |
242 |
30 |
|
0.33 |
43 |
44 |
52 |
25 |
1000 |
330 |
35 |
|
0.47 |
51 |
44 |
52 |
22 |
850 |
399 |
45 |
|
0.68 |
61 |
44 |
52 |
22 |
800 |
544 |
55 |
|
1 |
74 |
44 |
52 |
20 |
700 |
700 |
65 |
|
1.2 |
80 |
44 |
52 |
20 |
650 |
780 |
75 |
|
1.5 |
52 |
70 |
84 |
30 |
600 |
900 |
45 |
|
2.0 |
60 |
70 |
84 |
30 |
500 |
1000 |
55 |
|
3.0 |
73 |
70 |
84 |
30 |
400 |
1200 |
65 |
|
4.0 |
83 |
70 |
84 |
30 |
350 |
1400 |
70 |
| Un=6000V.DC | |||||||
|
Capacitance (μF) |
φD (mm) |
L(mm) |
L1(mm) |
ESL(nH) |
dv/dt(V/μS) |
Ipk(A) |
Irms(A) |
|
0.22 |
43 |
60 |
72 |
25 |
1500 |
330 |
35 |
|
0.33 |
52 |
60 |
72 |
25 |
1200 |
396 |
45 |
|
0.47 |
62 |
60 |
72 |
25 |
1000 |
470 |
50 |
|
0.68 |
74 |
60 |
72 |
22 |
900 |
612 |
60 |
|
1 |
90 |
60 |
72 |
22 |
800 |
900 |
75 |
| Un=7000V.DC | |||||||
|
Capacitance (μF) |
φD (mm) |
L(mm) |
L1(mm) |
ESL(nH) |
dv/dt(V/μS) |
Ipk(A) |
Irms(A) |
|
0.22 |
45 |
57 |
72 |
25 |
1100 |
242 |
30 |
|
0.68 |
36 |
80 |
92 |
28 |
1000 |
680 |
25 |
|
1.0 |
43 |
80 |
92 |
28 |
850 |
850 |
30 |
|
1.5 |
52 |
80 |
92 |
25 |
800 |
1200 |
35 |
|
1.8 |
57 |
80 |
92 |
25 |
700 |
1260 |
40 |
|
2.0 |
60 |
80 |
92 |
23 |
650 |
1300 |
45 |
|
3.0 |
73 |
80 |
92 |
22 |
500 |
1500 |
50 |
| Un=8000V.DC | |||||||
|
Capacitance(μF) |
φD (mm) |
L(mm) |
L1(mm) |
ESL(nH) |
dv/dt(V/μS) |
Ipk(A) |
Irms(A) |
|
0.33 |
35 |
90 |
102 |
30 |
1100 |
363 |
25 |
|
0.47 |
41 |
90 |
102 |
28 |
1000 |
470 |
30 |
|
0.68 |
49 |
90 |
102 |
28 |
850 |
578 |
35 |
|
1 |
60 |
90 |
102 |
25 |
800 |
800 |
40 |
|
1.5 |
72 |
90 |
102 |
25 |
700 |
1050 |
45 |
|
2.0 |
83 |
90 |
102 |
25 |
650 |
1300 |
50 |
| Un=10000V.DC | |||||||
|
Capacitance (μF) |
φD (mm) |
L(mm) |
L1(mm) |
ESL(nH) |
dv/dt(V/μS) |
Ipk(A) |
Irms(A) |
|
0.33 |
45 |
114 |
123 |
35 |
1500 |
495 |
30 |
|
0.47 |
54 |
114 |
123 |
35 |
1300 |
611 |
35 |
|
0.68 |
65 |
114 |
123 |
35 |
1200 |
816 |
40 |
|
1 |
78 |
114 |
123 |
30 |
1000 |
1000 |
55 |
|
1.5 |
95 |
114 |
123 |
30 |
800 |
1200 |
70 |
Product detail pictures:
Related Product Guide:
We stay with the basic principle of "quality initially, services first, steady improvement and innovation to fulfill the customers" for your management and "zero defect, zero complaints" as the quality objective. To perfect our company, we give the goods while using the good high-quality at the reasonable selling price for 2018 High quality High Power Film Capacitor - GTO snubber capacitor in power electronic equipment – CRE , The product will supply to all over the world, such as: Malaysia, Uruguay, Korea, After years' creating and developing, with the advantages of trained qualified talents and rich marketing experience, outstanding achievements were gradually made. We get good reputation from the customers due to our good products quality and fine after-sale service. We sincerely wish to create a more prosperous and flourishing future together with all the friends home and abroad!
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