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2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE

2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE Featured Image
  • 2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE
  • 2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE
  • 2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE
  • 2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE

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In the past few years, our company absorbed and digested advanced technologies both at home and abroad. Meanwhile, our company staffs a team of experts devoted to the development of Pulse Discharge Capacitors , Energy Buffering Capacitor , Capacitor For Igbt , We can do your customized order to meet your own satisfactory! Our company sets up several departments, including production department, sales department, quality control department and sevice center, etc.
2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE Detail:

SMJ-P series

Rated Voltage Range: 1000 VDC to 2000 VDC
Capacitance Range: 0.1 uf to 3.0 uf
Mounting Pitch : 22.5 mm to 48 mm
Construction : Metallized Polypropylene Dielectric Internal Series Connection
Application : IGBT Protection, Resonance Tank Circuits

The self-healing, dry-type, snubber capacitor elements are produced using specially profiled, wave cut metallized PP film which ensures low self-inductance, high rupture resistance and high reliability. Over-pressure disconnection is not considered necessary. The capacitor top is sealed with self-extinguishing eco-friendly epoxy. Special design ensures very low self inductance.

IMG_0397.HEIC

Specification table

Voltage Un 700V.DC,Urms400Vac;Us1050V
Diemension（mm）
Cn(μF) L(±1) T(±1) H(±1) ESR @100KHz  (mΩ) ESL(nH) dv/dt    (V/μS) Ipk(A) Irms @40℃ @100KHz (A)
0.47 42.5 24.5 27.5 12 25 500 235 8
0.68 42.5 24.5 27.5 10 25 480 326.4 10
1 42.5 24.5 27.5 8 24 450 450 12
1.5 42.5 33.5 35.5 7 25 430 645 5
2 42.5 33 35.5 6 24 420 840 15
2.5 42.5 33 45 6 23 400 1000 18
3 42.5 33 45 5.5 22 380 1140 20
3 57.5 30 45 5 26 350 1050 22
3.5 42.5 33 45 5 23 350 1225 25
3.5 57.5 30 45 6 25 300 1050 22
4.7 57.5 35 50 5 28 280 1316 25
5.6 57.5 38 54 4 30 250 1400 25
6 57.5 38 54 3.5 33 230 1380 28
6.8 57.5 42.5 56 3.2 32 220 1496 32
8 57.5 42.5 56 2.8 30 200 1600 33
Voltage Un 1000V.DC,Urms500Vac;Us1500V
Diemension（mm）
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.47 42.5 24.5 27.5 11 25 1000 470 10
0.68 42.5 24.5 27.5 8 25 800 544 12
1 42.5 33.5 35.5 6 24 800 800 15
1.5 42.5 33 45 6 24 700 1050 15
2 42.5 33 45 5 22 700 1400 20
2.5 57.5 30 45 5 30 600 1500 22
3 57.5 35 50 4 30 600 1800 25
3.3 57.5 35 50 3.5 28 550 1815 25
3.5 57.5 38 54 3.5 28 500 1750 25
4 57.5 38 54 3.2 26 500 2000 28
4.7 57.5 42.5 56 3 25 420 1974 30
5.6 57.5 42.5 56 2.8 24 400 2240 32
Voltage Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.47 42.5 24.5 27.5 11 24 1200 564 10
0.68 42.5 33.5 35.5 7 23 1100 748 12
1 42.5 33.5 35.5 6 22 800 800 14
1.5 42.5 33 45 5 20 800 1200 15
2 57.5 30 45 4 30 750 1500 20
2.5 57.5 35 50 4 28 700 1750 25
3 57.5 35 50 4 27 600 1800 25
3.3 57.5 38 54 4 27 550 1815 28
3.5 57.5 38 54 3.5 25 500 1750 28
4 57.5 42.5 56 3.5 25 450 1800 30
4.7 57.5 42.5 56 3.2 23 420 1974 32
Voltage Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.33 42.5 24.5 27.5 12 25 1300 429 9
0.47 42.5 24.5 27.5 10 24 1300 611 10
0.68 42.5 33.5 35.5 8 23 1300 884 12
1 42.5 33 45 7 22 1200 1200 15
1.5 42.5 33 45 6 22 1200 1800 18
1.5 57.5 30 45 5 31 1200 1800 20
2 57.5 30 45 5 30 1100 2200 22
2.5 57.5 35 50 4 28 1100 2750 25
3 57.5 38 54 4 27 700 2100 25
3.3 57.5 38 54 3.8 26 600 1980 28
3.5 57.5 42.5 56 3.5 25 500 1750 30
4 57.5 42.5 56 3.2 25 450 1800 32
Voltage Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.22 42.5 24.5 27.5 15 25 1500 330 10
0.33 42.5 33.5 35.5 12 24 1500 495 12
0.47 42.5 33.5 35.5 11 23 1400 658 15
0.68 42.5 33 45 8 22 1200 816 18
0.68 57.5 30 45 7 30 1100 748 20
0.82 42.5 33 45 7 28 1200 984 22
1 57.5 30 45 6 28 1100 1100 25
1.5 57.5 35 50 5 25 1000 1500 28
2 57.5 38 54 5 24 800 1600 28
2.2 57.5 42.5 56 4 23 700 1540 32
Voltage Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF) L(±1) T(±1) H(±1) ESR(mΩ) ESL(nH) dv/dt(V/μS) Ipk(A) Irms
0.15 42.5 33 45 18 28 2500 375 25
0.22 42.5 33 45 15 27 2200 484 28
0.22 57.5 35 50 15 25 2000 330 20
0.33 57.5 35 50 12 24 1800 495 20
0.47 57.5 38 54 11 23 1600 752 22
0.68 57.5 42.5 56 8 22 1500 1020 28
Product detail pictures:

2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE detail pictures

2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE detail pictures

2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE detail pictures

2018 Latest Design Capacitor For Cell Proliferator - Low loss dielectric of polypropylene film Snubber capacitor for IGBT application – CRE detail pictures

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