professional factory for High Pulse Current Igbt Snubber - High power resonant capacitors – CRE

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professional factory for High Pulse Current Igbt Snubber - High power resonant capacitors – CRE Detail:

Technical data

Operating temperature range	Max.Operating temperature.,Top,max: +90℃Upper category temperature: +85℃Lower category temperature: -40℃
capacitance range	1μF～8μF
Rated voltage	1200V.DC～4000V.DC
Cap.tol	±5%(J) ;±10%(K)
Withstand voltage	1.5Un /10S
Dissipation factor	tgδ≤0.001 f=1KHz
Insulation resistance	RS*C≥5000S (at 20℃ 100V.DC 60S)
Life expectancy	100000h(Un; Θhotspot≤85°C)
Reference standard	IEC 61071 ;IEC 60110

Feature

1. Plastic tubular or Mylar tape package, Sealed with resin;
2. Customized dimension;
3. low ESL and ESR;
4. High pulse Current;
5. High-frequency current capacity.

Application

1. Widely used in power electronic devices in series / parallel resonant circuit.

2. Wireless charging, Inverter Welder, induction heating equipment resonance occasions, etc

Outline drawing

Voltage	Un 1200V.DC Urms 500V.AC Upeak 710V
Cn(uF)	φD (mm)	L(mm)	ESR@100KHz (mΩ))	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(40℃ @100KHz )	Qn（kVar）
1	38	40	4.8	27	900	900	35	15.8
1.5	46	40	3.2	25	800	1200	45	20.3
2	53	40	2.4	25	750	1500	50	22.5
2	38	47	2.4	28	720	1440	33	14.9
3	64	40	1.6	23	680	2040	60	27.0
3	45	47	2.1	27	620	1860	40	18.0
4	52	47	1.6	26	550	2200	45	20.3
5	58	47	1.3	25	500	2500	53	23.9
6	63	47	1.1	23	450	2700	58	26.1
7	68	47	0.9	22	450	3150	60	27.0
8	73	47	0.8	20	400	3200	65	29.3

Voltage	Un 2000V.DC Urms 750V.AC Upeak 1050V
Cn(uF)	φD (mm)	L(mm)	ESR@100KHz (mΩ))	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(40℃ @100KHz )	Qn（kVar）
1	41	40	4.0	27	1100	1100	38	25.7
1.5	50	40	2.7	26	1000	1500	48	32.4
2	58	40	2.0	25	900	1800	55	37.1
2	49	60	2.0	26	850	1700	45	30.4
3	70	40	1.3	23	750	2250	65	43.9
3	59	60	1.9	25	650	1950	55	37.1
4	81	40	1.4	22	600	2400	75	50.6
4	68	60	1.4	23	550	2200	62	41.9
5	76	60	1.1	22	500	2500	70	47.3
6	83	60	0.9	21	480	2880	75	50.6

Voltage	Un 30000V.DC Urms 1200V.AC Upeak 1700V
Cn(uF)	φD (mm)	L(mm)	ESR@100KHz (mΩ))	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(40℃ @100KHz )	Qn（kVar）
0.33	43	44	7.2	26	1800	594	40	43.2
0.47	51	44	5.5	25	1700	799	48	51.8
0.5	53	44	4.8	25	1600	800	50	54.0
0.68	61	44	3.5	24	1500	1020	56	60.5
0.75	64	44	3.2	24	1400	1050	60	64.8
0.8	66	44	4.0	23	1350	1080	62	67.0
1	74	44	3.2	22	1300	1300	70	75.6
1.2	81	44	2.7	21	1250	1500	75	81.0
1.5	90	44	2.1	20	1200	1800	80	86.4

Voltage	Un 4000V.DC Urms 1500V.AC Upeak 2100V
Cn(uF)	φD (mm)	L(mm)	ESR@100KHz (mΩ))	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(40℃ @100KHz )	Qn（kVar）
0.08	46	60	10.0	28	3000	240	40	51.0
0.1	51	60	8.0	27	2850	285	45	57.4
0.12	56	60	6.6	26	2750	330	50	63.8
0.15	63	60	8.5	25	2500	375	58	74.0
0.18	64	60	7.1	25	2400	432	60	76.5
0.25	80	60	5.1	23	2200	550	75	95.6
0.33	52	60	3.9	23	2000	660	48	61.2
0.47	62	60	5.1	22	1800	846	58	74.0
0.5	64	60	4.8	22	1700	850	60	76.5
0.68	75	60	3.5	20	1600	1088	70	89.3
0.75	78	60	3.2	20	1500	1125	72	91.8

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